Partnering opportunity

[Eureka] A Korean research institute is seeking R&D partners for developing precursors for ALD (atomic layer deposition) process


A government-funded Korean research institute is preparing a project proposal under Eureka in 2019. The main goal of the joint research is to create high-performance thin layers using precursors for thin film battery or smart window applications. To this end, the institute is looking for partners specialized in developing precursor material for ALD (atomic layer deposition) process. A chemical or technological company is preferred; R&D institutes are all welcomed to join as well.

Partner sought

- Type and Role of partner sought: A chemical or technological company or research institute - Required activity of partner: Development of pre-cursor material for ALD (atomic layer deposition) process


Atomic layer deposition (ALD) is a thin film deposition technology using sequential use of a gas phase chemical process. The ALD process uses two chemicals typically called precursors. These precursors are deposited on the substrate sequentially and reacted to form a thin dense film. Compared to conventional thin film processes it has the advantage to grow, form materials uniformly with high precision on arbitrarily complex and large substrates. As the deposited layer can be finely controlled, its prospective is also seen in scaling down microelectronic devices according to Moore’s law. Currently in areas of semiconductor various precursors have been studied to form Al2O3, ZrO2 and HfO2 materials.The research institute has conducted research using ALD process for applications such as smart windows and thin film batteries. Previous research using TEMAV and tris-dimethlyamino cyclopentadienyl vanadium has been successful to form vanadium oxide films on glass substrates. Through the joint research, the institute expects to commercialize vandadium oxide thin films or LiPON thin films. The institute is looking for partners specialized in developing pre-cursor material for ALD(Atomic layer deposition) process. Preferably a chemical, technological company or R&D institute are all welcomed to join for R&D collaboration. The expected outcome of R&D project will be as follows: 1. Commercialization of new type precursor for ALD process to obtain higher GPC (growth per cycle) 2. High performance thin films for smart window or thin film battery applications The institute aims to join Eureka project with the deadline of call on February 1st, 2019. The project is expected to take three years of development time including commercialization, and the institute is collaborating with ALD equipment manufacture to form a consortium. The annual plan of the project is as below: 1. First year: Development of ALD process for making smart window or thin film battery on flexible substrate 2. Second year: Development of large scale ALD equipment 3. Third year: Improvement of and fine tuning of ALD process for forming thin dense films on polymer films As the Korean institute wishes to submit the project proposal to the Eurostar 2 project on September 12, 2019, they intend to limit the issuance of EOIs for partner search to May 15 2019.

Advantages and innovations

1. Atomic layer deposition process has various advantages compared to conventional deposition methods such as sol gel coating, APCVD and PVD(Sputter) for forming thin dense films. 2. Currently there are several research projects using ALD process to make large area thin films for smart window applications on flexible substrates. 3. In order to achieve thin dense films control of ALD process, design of ALD equipment and precursor properties are critical. Currently for smart window applications where vanadium oxide thin films are formed pre cursors such as VO (acac)2, VTIP (vanaly-tri-isopropoxide), TEMAV, CpV(nMe2)3(tris-dimethlamino cyclopentadienyl vanadium) have been studied. 4. This technology aims to achieve low-temperature (<120 ° C) process and high productivity through development of low-cost & high-GPC precursor and plasma enhanced spatial-ALD equipment. 5. Also LiPON material using Li tert-butoxide as precursors has been studied for thin film battery & electrochromic smart window applications

Development stage

Not available

Intellectual Property Rights (IPR)

Not available

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