Partnering opportunity

[Eurostars2] Looking for partners for developing precursors for ALD (atomic layer deposition) process

Summary

A government-funded Korean research institute is preparing a project proposal under Eureka, Eurostars2 in 2020. The main goal of the joint research is to create high-performance thin layers using precursors for automobile and wearable device applications. To this end, the institute is looking for partners specialized in developing precursor material for ALD (Atomic layer deposition) process. Preferably a chemical or technological company or R&D institute are sought for research agreements.

Partner sought

- Type of partner sought: Company or research institute - Required activity of the partner: Development of pre-cursor material for ALD(atomic layer deposition) process

Description

Atomic layer deposition (ALD) is a thin film deposition technology using sequential use of a gas phase chemical process. The ALD process uses two chemicals typically called precursors. These precursors are deposited on the substrate sequentially and reacted to form a thin dense film. Compared to conventional thin film processes it has the advantage to grow, form materials uniformly with high precision on arbitrarily complex and large substrates. As the deposited layer can be finely controlled its perspective is also seen in scaling down microelectronic devices according to Moore’s law. Currently, in areas of semiconductor, various precursors have been studied to form Al2O3, ZrO2, and HfO2 materials. A leading R&D institute specializing in electronics and IT under the Korean Ministry of Trade has built a good base of ALD application in smart windows and thin-film batteries through the previous study. Using TEMAV, tris-dimethylamino cyclopentadienyl vanadium have been successful to form vanadium oxide films on glass substrates. The institute is currently seeking collaboration partners specialized in developing pre-cursor material for ALD(Atomic layer deposition) process for their further research on mobility and wearable device applications to realize better performance than the former application. The institute aims to join Eureka or Eurostar project with the deadline of call on February 1st, 2020. The project is expected to take three years of development period including commercialization, and the institute is collaborating with ALD equipment manufacture to form a consortium. Preferably a chemical or technological company or R&D institute are all welcomed to join for R&D collaboration. *The annual plan of the project is as below: 1. First-year: New development of ALD process for application in automobile/wearable device 2. Second-year: Development of large scale ALD equipment 3. Third-year: Improvement of and fine-tuning of the ALD process for forming thin dense films according to application. As the Korean institute wishes to submit the project proposal to the Eurostar 2 project on February 1st 2020, they intend to limit the issuance of EOIs for partner search to December 1st 2019. *The expected outcome of R&D project will be as follows: 1. Commercialization of new type precursor for ALD process to obtain higher GPC(growth per cycle) 2. High performance for automobile application and new type of wearable device

Advantages and innovations

- Atomic layer deposition process has various advantages compared to conventional deposition methods such as sol-gel coating, APCVD and PVD(Sputter) for forming thin dense films. - In order to achieve thin dense films control of ALD process, design of ALD equipment and precursor properties are critical. Currently, for smart window applications where vanadium oxide thin films are formed precursors such as VO(acac)2, VTIP(vanaly-tri-isopropoxide), TEMAV, CpV(nMe2)3(tris-dimethylamino cyclopentadienyl vanadium) have been studied. - This technology aims to achieve low-temperature (<120 ° C) process and high productivity through the development of low-cost & high-GPC precursor and plasma-enhanced spatial-ALD equipment.

Development stage

Proposal under development

Intellectual Property Rights (IPR)

Not available


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