Partnering opportunity

An innovative semiconductor manufacturing process based on an aluminium alloy

Summary

The French TTO (Technology Transfer Office) is acting on behalf of an established public laboratory of the Paris region that has developed and patented an innovative platform that allows to easily build an innovative semiconductor based on a monolithic aluminium alloy. The French public research centre is looking for interested companies for research agreements or license agreements.

Partner sought

Research cooperation agreement: the potential industrial partner should be interested to invest in co-development for another specific apllication like LASER or VCELS. A research agreement between the laboratory and a compagny can be partielly funded by the TTO. License agreement: the TTO is ready to negotiate directly the patents rights for specific applications.

Description

A French Technology Transfer Office (TTO) is acting on behalf several major laboratories in the Paris region. A research team has developed an innovative platform that allows to easily build a monolithic AlGaAs-on-Insulator for semiconductor (AlGaAs : Aluminium gallium arsenide). * Market challenges : The new technologies of optoelectronics (sensors and diodes) require the use of high-capacity lasers to transmit more and more information or to detect light variations with infinite precision (observation of physical phenomena at the nano level or microbiological observation). That is why new materials are being developed to create new light emission devices such as VCSEL (Vertical-cavity surface-emitting laser) or new types of sensors like Surface plasmon resonance (SPR) or LIDAR. * State of the art : III-V semiconductors compounds are alloys containing elements from groups III and V in the periodic table. They have particular physical properties due their crystalline structures that are useful for optoelectronics applications. AlGaAs is one of them and has superior performances over silicon such as : • No Two Photon Absorption at 1.55 μm • Direct laser emission • Optical modulation at higher frequency rate. * Proposed technology : The laboratory has developed a platform that allow to build a monolithic structure of a thick layer of aluminium oxide (superior to 1μm), which plays the role of optical material and improves the light capture inside an AlGaAs heterostructure on top of it. With this technology, it is possible to develop SPR sensors based on a dielectric (instead of gold or silver) which avoids heat peaks that can affect the sensitivity of the sensor. The platform can also be used to design low lasing threshold and fast modulation laser. These lasers, used in data centers, consume less energy *Partnership : The partner sought could be a company interested in : - a license agreement (the TTO is able to negotiate directly the intellectual property transactions for specific applications), or - a research cooperation agreement in order to investigate new application. *Keywords : #Photonics #Non linear optics #Laser #AlGaAs #Insulator #III-V semiconductors #Monolithic platform

Advantages and innovations

The advantages of this new technology are : • Light confinement • Low lasing threshold • High modulation frequency • High conversion rate for Second Harmonic Generation • Avoids heat peaks

Development stage

Available for demonstration

Intellectual Property Rights (IPR)

Patent(s) applied for but not yet granted


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